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Electron irradiation and annealing effects on the pseudogap in optimally doped YBCO single crystals

G. Ya. Khadzhai

Physics Department, V. Karazin Kharkiv National University, 61022 Kharkiv, Ukraine

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R. V. Vovk

Physics Department, V. Karazin Kharkiv National University, 61022 Kharkiv, Ukraine

E-mail Address: rvvovk2017@gmail.com

Corresponding author.

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S. F. Zdorovko

Physics Department, V. Karazin Kharkiv National University, 61022 Kharkiv, Ukraine

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, and

A. Chroneos

Faculty of Engineering, Environment and Computing, Coventry University, CV1 5FB, UK

Department of Materials, Imperial College, London, SW7 2AZ, UK

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https://doi.org/10.1142/S0217984920501511Cited by:2 (Source: Crossref)

Abstract

The effect of room-temperature annealing on the basal-plane conductivity of YBCO single crystals is investigated after their irradiation with fast electrons. It is revealed that the excess conductivity $Δ σ (T)$ $Δ σ (T)$ of the samples obeys an exponential temperature dependence in a broad temperature range $T_{f} < T < T^{*}$ $T_{f} < T < T^{*}$ . Here, $T_{f}$ $T_{f}$ is the crossover temperature from the pseudogap to the fluctuation conductivity regime. The description of the excess conductivity with the expression $Δ σ \propto T / T^{*} exp (Δ^{*} / T)$ $Δ σ \propto T / T^{*} exp (Δ^{*} / T)$ can be interpreted in terms of the mean-field theory where $T^{*}$ $T^{*}$ corresponds to the mean-field transition temperature to the pseudogap state and the dependence $Δ σ (T)$ $Δ σ (T)$ is described within the framework of the BCS-BEC crossover theory.

Keywords:

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