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SEGREGATION OF Cu IN THE Cu/Ni MULTILAYERS

L. Y. LI

School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

Corresponding author.

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G. H. YU

School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

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, and

F. W. ZHU

School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

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https://doi.org/10.1142/S0217984908016650Cited by:0 (Source: Crossref)

Abstract

The segregation of Cu atoms in the Cu/Ni multilayers was investigated by means of the full-potential linearized augmented plane-wave method with the generalized-gradient approximation formula. We investigated the segregation of Cu atoms when the Cu/Ni slab is along the (001) and (111) directions, respectively. The results obtained show that at most one-layer Cu atoms can segregate to the Ni surface when Ni films are deposited on the Cu substrate and the segregation of Cu atoms is not sensitive to the orientation of the Cu/Ni slab surface. The result of Cu segregation is to reduce the vacuum effect.

Keywords:

PACS: 68.35.Dv, 81.05.Bx

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Vol. 22, No. 20

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Received 28 December 2007

Revised 19 February 2008

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SEGREGATION OF Cu IN THE Cu/Ni MULTILAYERS

Abstract

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System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

SEGREGATION OF Cu IN THE Cu/Ni MULTILAYERS

Abstract

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