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A CMOS REACTION–DIFFUSION DEVICE USING MINORITY-CARRIER DIFFUSION IN SEMICONDUCTORS

MOTOYOSHI TAKAHASHI

Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Sapporo 060-0814, Japan

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TETSUYA ASAI

Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Sapporo 060-0814, Japan

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TETSUYA HIROSE

Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Sapporo 060-0814, Japan

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YOSHIHITO AMEMIYA

Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Sapporo 060-0814, Japan

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https://doi.org/10.1142/S0218127407018014Cited by:4 (Source: Crossref)

Abstract

We propose a CMOS device that is analogous to the reaction–diffusion system, a chemical complex system that produces various dynamic phenomena in the natural world. This electrical reaction–diffusion device consists of an array of pn junctions that are operated by CMOS reaction circuits and interact with each other through minority-carrier diffusion. Computer simulations reveal that the device can produce animated spatiotemporal carrier concentration patterns, e.g. expanding circular patterns and rotating spiral patterns that correspond to the dissipative structures produced by chemical reaction–diffusion systems.

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