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Study of Short-Term and Long-Term Memories by Hodgkin–Huxley Memristor

L. Wen

https://orcid.org/0009-0006-7722-440X

Department of Physics, Xiamen University Malaysia, Jalan Sunsuria, 43900 Sepang, Selangor, Darul Ehsan, Malaysia

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and

C. K. Ong

https://orcid.org/0000-0002-2287-0678

Department of Physics, Xiamen University Malaysia, Jalan Sunsuria, 43900 Sepang, Selangor, Darul Ehsan, Malaysia

Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China

E-mail Address: ckong@xmu.edu.my

Corresponding author.

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https://doi.org/10.1142/S0218127424500408Cited by:3 (Source: Crossref)

Abstract

Long-term memory (LTM ) and short-term memory (STM ) and their evolution from one to the other are important mechanisms to understand brain memory. We use the Hodgkin–Huxley (HH ) model, a well-tested and closest model to biological neurons and synapses, to shine some light on LTM and STM memorization mechanisms. The role of ${Na}^{+}$ and $K^{+}$ ion channels playing in LTM and STM process is carefully examined by using three different types of input signals, namely, a step DC voltage, a positive part of sinusoidal wave and periodic square signal with read voltage. Results are analyzed based on first-order $K^{+}$ memristor and second-order ${Na}^{+}$ memristor.

Keywords:

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Vol. 34, No. 02

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History

Received 26 April 2023

Revised 3 December 2023

Accepted 8 January 2024

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This is an Open Access article published by World Scientific Publishing Company. It is distributed under the terms of the Creative Commons Attribution 4.0 (CC BY) License which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Study of Short-Term and Long-Term Memories by Hodgkin–Huxley Memristor

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