RADIATION DAMAGE STUDY OF SILICON STRIPIXEL SENSOR (FOR PHENIX EXPERIMENT)

PHENIX Vertex Tracker will be installed in 2009 in order to enhance the physics capability in both heavy ion and spin program. It is designed to separate bottom and charm quark production by measuring distance closest approach even in the heavy ion collision and identifying jet in the polarized proton-proton collisions. The detector consists of two inner pixel layers and two outer stripixel layers. The stripixel sensor is single sided two dimensional silicon strip sensor. It will be suffered by the radiation damage up to 4fb⁻¹ of integrated luminosity over 10 years of RHIC running period. In our case the damage will increase leakage current from the sensor and degraded front end electronics performance. This article will describe the radiation damage study for the stripixel sensor.