Special Issue: Advances in Functional Materials; Guest Editors: Xiaoping Li, Li Lu, Jiangping Tu, Xinbin Zhao and Tiejun ZhuNo Access

EFFECTS OF OPERATING CONDITIONS ON THE DEPOSITION OF GaAs IN A VERTICAL CVD REACTOR

JAE-SANG BAEK

School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea

Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea

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JIN-HYO BOO

Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea

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, and

YOUN-JEA KIM

School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746, Korea

Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon 440-746, Korea

Corresponding author.

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https://doi.org/10.1142/S0218625X0801107XCited by:2 (Source: Crossref)

Abstract

A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide (GaAs) from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The three-dimensional model which is used in this investigation includes complete coupling between the thermal-fluid transport and species transport with chemical reaction.

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