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Special Issue: Advances in Functional Materials; Guest Editors: Xiaoping Li, Li Lu, Jiangping Tu, Xinbin Zhao and Tiejun ZhuNo Access

INVESTIGATION ON HETEROSTRUCTURAL OPTOELECTRONIC SWITCHES

Department of Electronic Engineering, Air Force Academy, P. O. Box 14-49 Kangshan, Kaohsiung County 820, Taiwan

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Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan

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Department of Physics, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan

Corresponding author.

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Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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https://doi.org/10.1142/S0218625X08011123Cited by:0 (Source: Crossref)

Abstract

GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated to demonstrate the bulk-barrier and potential-spike height effects on the switching. It is seen that the illumination decreases the switching voltage V_S and increases the switching current I_S in the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS, the V_S and I_S present contrary trends. These characteristic variation differences in the two HSOSs are mainly due to the photogenerated carriers that affect the bulk-barrier and potential-spike heights.

Keywords:

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Vol. 15, No. 01n02

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History

Received 27 February 2007

Revised 29 July 2009

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