Special Issue: Advances in Functional Materials; Guest Editors: Xiaoping Li, Li Lu, Jiangping Tu, Xinbin Zhao and Tiejun ZhuNo Access

NANOSTRUCTURAL ANALYSIS OF A GaN-BASED VIOLET LASER DIODE

J. R. YANG

Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

Corresponding author.

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H. L. TSAI

Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

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T. Y. WANG

Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

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H. W. YEN

Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

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C. Y. CHEN

Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

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W. C. LI

Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

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, and

H. R. CHEN

Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

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https://doi.org/10.1142/S0218625X08011202Cited by:0 (Source: Crossref)

Abstract

The nanostructure of p-type AlGaN/GaN strained-layer superlattice (SLS) cladding in a GaN-based violet laser diode (LD) has been investigated by high-angle annular dark-field (HAADF) scanning-transmission electron microscopy (STEM). The pairs of the AlGaN and GaN layers in SLS cladding are observed, where the AlGaN and GaN layers appear as dark and bright bands. It is also found that the threading dislocations disappeared within the SLS; this evidence manifests the role of SLS in suppressing threading dislocation propagation.

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