ALL-POLYMER BASED FLEXIBLE FIELD EFFECT TRANSISTOR USING POLY(3,4-ETHYLENEDIOXYTHIOPHENE) (PEDOT) AND POLYPYRROLE (PPY)

We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spin-coater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I_ds) as a function of gate bias (V_g). We suggest that ionic motion in the active layer plays an important role for electrical properties.