SPECIAL ISSUE ON THE 13TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, PART II; EDITED BY R. SURISNo Access
STM/STS STUDIES OF THE INITIAL STAGE OF GROWTH OF ULTRA-THIN Bi FILMS ON 7 × 7-Si(111) SURFACE
https://doi.org/10.1142/S0219581X0700481XCited by:1 (Source: Crossref)
Abstract
The results of investigation of the room temperature growth of thin Bi films on Si(111)-7 × 7 are present. In the initial stage of Bi film growth the rotationally disordered, pseudo-cubic, Bi{012} islands with a uniform height of 13 Å are formed. With increasing bismuth on the surface, islands interconnect, maintaining however their uniform height, and structural phase transition of the {012} film into a hexagonal Bi(001) film takes place.
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