SPECIAL ISSUE ON THE 13TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, PART II; EDITED BY R. SURISNo Access
GROUND AND EXCITED STATE PHOTOLUMINESCENCE MAPPING ON InAs/InGaAs QUANTUM DOT STRUCTURES
https://doi.org/10.1142/S0219581X07004912Cited by:0 (Source: Crossref)
Abstract
This paper presents the photoluminescence study at 12 K and scanning photoluminescence spectroscopy investigation of the ground and excited states at 80 and 300 K on InAs QDs inserted in In0.15Ga0.85As/GaAs QW structures and created at different QD growth temperatures. It is shown that investigated structures are characterized by the long range variation of an average QD size in QD ensemble across the wafer. This long range QD size inhomogeneity was used for investigation of the multi-excited state energy trend versus ground state energy (or QD sizes).
