III–V SEMICONDUCTOR SURFACE NANOPATTERNING USING ATOMIC FORCE MICROSCOPY FOR InAs QUANTUM DOT LOCALIZATION

In order to create suitable nanoholes for quantum dot (QD) localization on InP and GaAs surfaces, we used atomic force microscopy in an intermittent contact mode coupled with a modulated voltage to realized local anodization at a nanometer scale. This method leads, after a few tens of milliseconds of oxidation, to an oxide height saturation and a low lateral growth rate for both surfaces. These specific results were used to control separately both the depth and the diameter of holes and to obtain compatible pattern for QD growth. We also demonstrated the thermal stability of these patterns at compatible temperatures with the InAs QD growth. First, results of QD growth on these patterns are presented.