Enhanced charge storage capability of (Bi2O3)0.4(ZrO2)0.6 charge trapping layer in nanocrystal memory devices
Abstract
A structure of p-Si/Al2O3/(Bi2O3)0.4(ZrO2)0.6(BZO)/Al2O3/Pt has been fabricated as Nanocrystal Charge Trapping Memory (NCTM), where the double nanocrystals (NCs) of Bi2O3 and ZrO2 generated in BZO charge trapping layer (CTL) through rapid temperature annealing (RTA). A large memory window (MW) of ∼8.6V and high defect traps of ∼2.2×1013cm−2 were obtained at a low sweeping voltages of ±8V after 800∘C for 90s in O2 ambient. The devices of different RTA conditions were investigated to analyze the process of NCs traps formation by the X-ray diffraction and X-ray photoelectron spectroscopy. Excellent retention characteristics of the room temperature were observed after 104s because of the deep defect traps and high quantum wells between CTL and tunneling oxide layer (TOL).
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