Narrow Results

Based on the experimental maximum escape depth $S(W_{\mathrm{\text{p0}}}$, $Z)$ of rediffused electrons from atomic number $Z$ metal at incident energy of primary electron $W_{\mathrm{\text{p0}}}$, the relationship among $S(W_{\mathrm{\text{p0}}}$, $Z)$, $W_{\mathrm{\text{p0}}}$ and $Z$ in the energy range of 9.3keV$\leqq W_{\mathrm{\text{p0}}}\leqq$40keV was obtained and proved to be true by experimental data. According to the experimental results of rediffused electrons, the characteristics of secondary electron emission, relationships among parameters of rediffused electrons and the main processes of rediffused electrons emission, the formula for $W_{\mathrm{\text{p0}}}$ backscattering coefficient $\eta (W_{\mathrm{\text{p0}}}$, $Z$, $t)$ of $Z$ metal films with film thickness $t$ as a function of $t$, Z and was deduced, and the results were analyzed. It is concluded that the deduced formula for $\eta (W_{\mathrm{\text{p0}}}$, $Z$, $t)$ can be used to calculate $\eta (W_{\mathrm{\text{p0}}}$, $Z$, $t)$ in the energy range of 9.3keV$\leqq W_{\mathrm{\text{p0}}}\leqq$40keV. The secondary electron yield $\delta$ from thin films are applied in more and more fields such as electronic information technology, accelerator and space flight, and $\eta (W_{\mathrm{\text{p0}}}$, Z, $t)$ is an important parameter of $\delta$ from $Z$ metal films. So deducing the formula for $\eta (W_{\mathrm{\text{p0}}}$, $Z$, $t)$ in this study is necessary.