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(Pb,La)TiO₃ (PLT) and Pb(Zr,Ti)O₃ (PZT) thin films were deposited on Pt/SiO₂/Si substrate by metal-organic chemical vapor deposition (MOCVD) using a solid delivery system. The domain configurations of the deposited PLT thin films were investigated, and the film with a columnar structure exhibited a very stable write/read operation for the domain memory application. Electrical properties of PLT, PZT and rf-sputter-deposited (Ba,Sr)TiO₃ (BST) thin films were measured, and their conduction mechanisms were analyzed. The composition and thickness uniformity of BST thin films deposited by the low temperature MOCVD method on a patterned wafer with 0.15 μm-diameter contact holes were investigated, and complete thickness and composition uniformity were obtained especially for the case of a dome-wall-type chamber with a wall temperature of 450°C.

The dielectric properties of Ba_0.6Sr_0.4TiO₃ (BST) thin films deposited using SrRuO₃ (SRO) materials as bottom electrode were compared with those of the films grown using La_0.5Sr_0.5CoO₃ (LSCO) materials as bottom electrode. X-ray diffraction scanning revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases and atomic force microscopy showed that the root mean square roughness of BST/SRO films were similar to BST/LSCO films. The dielectric properties of the BST/SRO and BST/LSCO thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. Compared with BST/LSCO, the dielectric tunability for BST/SRO films slightly decreased, while the loss decreased synchronously. The figure of merit factor value increases from 25.67 for BST/LSCO films to 48.76 for BST/SRO films under an applied voltage of 6 V. The leakage current density of the thin films at a positive voltage of 2 V decreases from 2.41 × 10^-7A/cm² for BST/LSCO to 8.41 × 10^-8A/cm² for BST/SRO. This phenomenon is ascribed to the smaller strain induced in BST/SRO materials.

Single layered Ba_0.6Sr_0.4TiO₃ (BST) thin films were prepared on stainless steel (304) and quartz substrates by solution method. The microstructure, grain size, surface morphology and thickness of the films were reported on the basis of X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and UV-visible spectrometer. Variation in thickness influences the microstructure of the films. The single layered thin film had uniform crack-free surface morphology. The low frequency dielectric constants for the films of thicknesses 663, 476 and 451 nm were found to be 1246, 859 and 703, respectively at room temperature. The dielectric loss values for different thicknesses were found to be 0.238%, 0.170% and 0.120% for 100 kHz and 0.043%, 0.029 % and 0.028% for 1 kHz. The dielectric properties changed significantly with thickness of the film as well as with frequency. The tunability of the single layered BST film increased with film thickness. The refractive index, bandgap and thickness of the single layered thin film were calculated by using envelope method and Tauc's relation from the UV-visible transmission spectrum. The bandgap increases with the film thickness. These results show that this single layered film will be a potential material for tunable devices application.