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Titanium (Ti) thin films with (002) or (100) texture are favored for many applications. In this paper, Ti thin films were prepared by high-power pulsed magnetron sputtering, and the texture of Ti thin films was successfully tailored by adjusting the pulse width, substrate bias and magnetic field strength. It is found that the peak power and average power of the Ti target are increased by increasing sputtering pulse width and decreasing magnetic field strength, which raise the Ti plasma flux and ion/atom ratio of Ti ions in front of the substrate simultaneously. Ti thin films with a highly (002) out-of-plane texture can be obtained with higher pulse width and lower magnetic field strength. The Ti thin films with highly (100) out-of-plane texture can be achieved with shorter pulse width, lower magnetic field strength and substrate bias.

We report on a theoretical study of magnetoresistance (MR) effect in a magnetically modulated semiconductor heterostructure (MMSH) under an applied bias, which can be constructed on surface of ${\mathrm{\text{GaAs/Al}}}_x{\mathrm{\text{Ga}}}_{1-x}\mathrm{\text{As}}$ heterostructure by depositing two asymmetric ferromagnetic (FM) stripes. Bias-dependent transmission and conductance are calculated numerically, on the basis of both improved transfer matrix method (ITMM) and Landauer–Büttiker conductance theory. An obvious MR effect appears because of a significant difference of transmission between parallel and antiparallel (AP) magnetization configurations. Moreover, MR ratio can be tuned by the bias. These interesting features not only provide an alternative way to manipulate MR effect, but also may lead to an electrically-controllable MR device.