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The effect of boron weight percentage in the camphoric carbon target of pulsed laser deposition on the preparation of boron-doped amorphous carbon (a-C:B) films has been studied using standard measurement techniques. XPS results showed the a-C:B films bonding properties almost unchanged at lower Bwt% up to 10 Bwt%, after which it changes with the increase of Bwt%, indicating increasing doping concentration with increase of Bwt% in the target. This phenomenon is further supported by FTIR and Visible-Raman spectroscopy analyses. The variation of bonding and structural properties are also correlated with the optical gap (E_g) and electrical resistivity (ρ) characteristics which are related to successful doping of B for low content of B in the amorphous carbon (a-C) films as the bonding, structural and E_g remain almost unchanged, and the ρ decreased untill the film deposited at 10 Bwt%. Since both the E_g and ρ decrease sharply with higher Bwt%, this phenomenon can be related to the graphitization.

The successful deposition of boron (B)-doped p-type (p-C:B) and phosphorous (P)-doped n-type (n-C:P) carbon (C) films, and fabrication of p-C:B on silicon (Si) substrate (p-C:B/n-Si) and n-C:P/p-Si cells by the technique of pulsed laser deposition (PLD) using graphite target is reported. The cells' performances are represented in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25°C). The open circuit voltage (V_oc) and short circuit current density (J_sc) for p-C:B/n-Si are observed to vary from 230–250 mV and 1.5–2.2 mA/cm², respectively, and to vary from 215–265 mV and 7.5–10.5 mA/cm², respectively, for n-C:P/p-Si cells. The p-C:B/n-Si cell fabricated using the target with the amount of B by 3 Bwt% shows highest energy conversion efficiency, η = 0.20%, and fill factor, FF = 45%, while, the n-C:P/p-Si cell with the amount of P by 7 Pwt% shows highest energy conversion efficiency, η = 1.14%, and fill factor, FF = 41%. The quantum efficiencies (QE) of the p-C:B/n-Si and n-C:P/p-Si cells are observed to improve with Bwt% and Pwt%, respectively. The contributions of QE are suggested to be due to photon absorption by carbon layer in the lower wavelength region (below 750 nm) and Si substrates in the higher wavelength region. The dependence of B and P content on the electrical and optical properties of the deposited films, and the photovoltaic characteristics of the respective p-C:B/n-Si and n-C:P/p-Si heterojunction photovoltaic cells, are discussed.

This paper reports on the successful deposition of boron (B)-doped p-type (p-C:B) and phosphorus (P)-doped n-type (p-C:P) carbon (C) films, and the fabrication of p-C:B on silicon (Si) substrate (p-C:B/n-Si) and n-C:P/p-Si cells by a pulsed laser deposition (PLD) technique using a graphite target at room temperature. The boron and phosphorus atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2–1.75 and 0.22–1.77 atomic percentages, respectively. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination conditions (100 mW/cm², 25°C). The open circuit voltage (V_oc) and short circuit current density (J_sc) for p-C:B/n-Si are observed to vary from 230 to 250 mV and from 1.5 to 2.2 mA/cm², respectively; they vary from 215 to 265 mV and from 7.5 to 10.5 mA/cm², respectively, for n-C:P/p-Si cells. The p-C:B/n-Si cell fabricated using the target with the amount of boron by 3 weight percentages (Bwt%) showed the highest energy conversion efficiency, η = 0.20% and fill factor, FF = 45%. The n-C:P/p-Si cell fabricated using the target with the amount of 7 Pwt% showed the highest η = 1.14% and FF = 41%. The quantum efficiency (QE) of the p-C:B/n-Si and n-C:P/p-Si cells were observed to improve with Bwt% and Pwt%, respectively. The contribution of QE in the lower wavelength region (below 750 nm) may be due to photon absorption by the carbon layer, in the higher wavelength region it was due to the Si substrates. In this paper, the dependence of the boron and phosphorus content on the electrical and optical properties of the deposited films and the photovoltaic characteristics of the respective p-C:B/n-Si and n-C:P/p-Si heterojunction solar cells are discussed.