Narrow Results

The second-order optical nonlinearity (SON) of thermally poled fused silica was shown for the first time to be significantly improved by the implantation of multi-energy boron (B) ions, and the outcomes were compared with those obtained from the implantation of multi-energy argon (Ar) ions. Second-harmonic (SH) signals in both samples grew roughly linearly as the poling temperature rose. Samples with Ar implants showed a greater increase in SH signal with rising poling temperature. A qualitative explanation for the formation of ${\chi }^{(2)}$ in poled samples can be found in a model of charge hopping and migration through defects. The diminished SH signal in the B-implanted sample is probably caused by the negative charge trapping layer, as well as by B${}_{2\alpha }$ and E${}^{\prime }$ center defects.