Narrow Results

This paper reviews the plasmonic effects in graphene THz photodetectors (PD) and light emitters (LE). It is demonstrated that the devices based on double graphene-layer (DGL) or multiple graphene-layer structures with the graphene layers separated by thin tunnel barrier layers have advantages over the single graphene-layer (SGL) devices. In DGLs, this advantage is due to the photon-assisted resonant tunneling when the band offset of the graphene layers is aligned to the THz photon energy. The resonant emission or absorption of the THz radiation is enhanced by the cooperative resonant excitation of the graphene plasmons leading to an extremely high gain and/or responsivity in the graphene THz device structures.

The effects of energetic electron and proton irradiation on graphene-based devices were investigated. The focus of the study was on the electrical properties of graphene devices exposed to electron and proton beams. Field-effect transistors (FETs) were fabricated using graphene and then irradiated by high-energy electrons and protons of 40 keV that are comparable to the aerospace radiation environment. The deterioration of electric properties, especially the output and transfer characteristics, can be explained by the change of graphene lattice. The Raman spectra confirm the slight lattice deformation after electron irradiation and the structural damage after proton irradiation. Through comparison, it is also found that the proton irradiation will induce more severe influence on the devices than electron irradiation, due to the larger effective interaction radius of the proton.

This paper reviews the plasmonic effects in graphene THz photodetectors (PD) and light emitters (LE). It is demonstrated that the devices based on double graphene-layer (DGL) or multiple graphene-layer structures with the graphene layers separated by thin tunnel barrier layers have advantages over the single graphene-layer (SGL) devices. In DGLs, this advantage is due to the photon-assisted resonant tunneling when the band offset of the graphene layers is aligned to the THz photon energy. The resonant emission or absorption of the THz radiation is enhanced by the cooperative resonant excitation of the graphene plasmons leading to an extremely high gain and/or responsivity in the graphene THz device structures.