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In this study, a DLC pattern was fabricated through a photolithography process that constitutes a part of the semiconductor process, to investigate the frictional wear characteristics. The photolithography was used to produce negative patterns with a pattern width of 10 µm or 20 µm and a pattern depth of 500 nm on the DLC surface. The change in the coefficient of friction of the surface was investigated through a ball-on-disk tribology test on the fabricated micro/nano-sized DLC pattern. The DLC pattern fabricated by the photolithography process showed a superior coefficient of friction to that of the general DLC sample. These results show that the decrease in the surface friction coefficient of the patterned DLC thin film is due to the reduction in the surface contact area owing to the modification of the micro/nano-texture of the surface as well as the low friction characteristics of the DLC.

In this study, we developed a nanoscale emitter having a multi-layer thin-film nanostructure in an effort to maximize the field-emission effect with a low voltage difference. The emitter was a sapphire board on which tungsten– DLC multi-player thin film was deposited using PVD and CVD processes. This multi-layer thin-film emitter was examined in a high-vacuum X-ray tube system. Its field-emission efficiency according to the applied voltage was then analyzed.