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This paper analyzes the effect of 100keV silicon negative ion implantation in semi-insulating gallium arsenide sample for the fluences varying between $1\times 10^{15}$ and $2\times 10^{17}$ioncm${}^{-2}$ using Raman spectroscopy, Rutherford backscattering spectroscopy and Electron spin resonance spectroscopy. The gallium arsenide sample implanted with silicon negative ion for different fluences showed shift in the TO peak position with respect to unimplanted gallium arsenide sample. Increase in the broadening of TO peak was observed in the as-implanted samples, indicating development of stress and phonon confinement due to the incorporation of silicon in gallium arsenide crystal lattice. Annealing of as-implanted samples showed stress relaxation. Increase in RBS backscattering yield was observed in the as-implanted samples. Annealing of as-implanted (with high fluence) sample showed flat RBS yield response. ESR measurement study revealed restructuring of defects in the gallium arsenide sample implanted with fluence of $1\times 10^{17}$ioncm${}^{-2}$ after annealing to the temperature of $300^{\circ }$C.

In this paper, AC and DC electrical properties of organic solar cells based on P3HT:PCBM active layer have been investigated. The performance of such solar cell has demonstrated the efficiency of 2.31% corresponding with short-circuit current density of 6.08 mA ⋅ cm${}^{-2}$, open circuit voltage of 0.64 V and fill factor of 60%. The equivalent circuit and the properties of the supposed interfaces between the layers in the P3HT:PCBM-based solar cell have been estimated. AC properties have demonstrated series capacitance increasing with increasing frequencies, which means series capacitance saves charges and parallel capacitance has decreased with increasing of frequency work as discharge part of charges stored in series capacitance. Also, equivalent series and parallel resistances have demonstrated a decrease from 7 $\mathrm{\Omega }$ and 120 k$\mathrm{\Omega }$ at low frequency to 1 $\mathrm{\Omega }$ and 43 k$\mathrm{\Omega }$ at high frequencies, respectively.