Narrow Results

A survey of recent Raman scattering studies on the interstitial hydrogen molecule (H₂) in Si and GaAs is presented. It is shown that properties of H₂ strongly depend on the nuclear spin state I. In either material, para-H₂ (I=0) is unstable against irradiation with band gap light. In the case of Si, para-H₂ also preferentially disappears from the Raman spectra in the course of storage at room temperature in the dark. Possible explanations for this surprising behavior are discussed and compared with the latest infrared absorption studies.

This paper analyzes the effect of 100keV silicon negative ion implantation in semi-insulating gallium arsenide sample for the fluences varying between $1\times 10^{15}$ and $2\times 10^{17}$ioncm${}^{-2}$ using Raman spectroscopy, Rutherford backscattering spectroscopy and Electron spin resonance spectroscopy. The gallium arsenide sample implanted with silicon negative ion for different fluences showed shift in the TO peak position with respect to unimplanted gallium arsenide sample. Increase in the broadening of TO peak was observed in the as-implanted samples, indicating development of stress and phonon confinement due to the incorporation of silicon in gallium arsenide crystal lattice. Annealing of as-implanted samples showed stress relaxation. Increase in RBS backscattering yield was observed in the as-implanted samples. Annealing of as-implanted (with high fluence) sample showed flat RBS yield response. ESR measurement study revealed restructuring of defects in the gallium arsenide sample implanted with fluence of $1\times 10^{17}$ioncm${}^{-2}$ after annealing to the temperature of $300^{\circ }$C.

The surface morphology modification and optical property modification of semi-insulating gallium arsenide sample implanted with 100 keV silicon ions with the fluences ranging between 5 × 10${}^{15}$ and 4 × 10${}^{17}$ ion cm${}^{-2}$ were analyzed using scanning electron microscopy and UV–Vis–NIR spectroscopy study. Scanning electron microscopy study revealed pore-like structure formation on the surface of gallium arsenide samples after silicon ion implantation. The size of these pore-like structures was found to increase with increasing ion fluence. Energy dispersive X-ray analysis showed an increase in silicon concentration in the gallium arsenide sample after silicon ion implantation with increasing ion fluence. The UV–Vis–NIR spectroscopy study revealed a decrease in optical transmission for silicon ion implanted gallium arsenide sample with increasing ion fluence. An additional absorption band was observed for the gallium arsenide sample implanted with the highest fluence (4 × 10${}^{17}$ ion cm${}^{-2})$. Urbach tail energy was found to increase with respect to ion fluence.

THz response of AlGaAs/InGaAs/GaAs HEMT structure has been investigated. The structure consists of the serpentine chain of series connected HEMTs. The source of one is the drain for the subsequent transistor. Experiments have been showed THz response peculiarities of such structures and enhanced noise equivalent power.