Narrow Results

In the given work, compliance with the distribution law of defect vacancies formed in ZrO₂ crystal irradiated with 2MeV energy H${}^{+}$ ions at room temperature was studied (The fluxes density for the H${}^{+}$ ion was chosen to be 1017 ions/cm²). The effect of H${}^{+}$ ions with fluxes density at different temperatures (500^∘C, 600^∘C, 700^∘C, 800^∘C and 900^∘C) on W and S parameters was determined. The mechanism of formation of nanoclusters in the ZrO₂ crystal structure under the influence of H${}^{+}$ radiation, the vacancy cluster formed by 2Zr vacancies and 4O vacancies, and its location in triple spaces with hydrogen atoms were determined. 2Zr and 4 vacancies were determined by the $\tau$ values of the vacancy clusters growing under the influence of radiation and the positions of hydrogen atoms in the 1VZr, 1VO, di-VZrO triple-VZrO₂ vacancy groups.