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Photocatalytic technology is currently the most promising technology for environmental pollution control. The preparation of photocatalysts with excellent properties is the core of the development of photocatalytic technology. TiO₂ can form a heterojunction with g-C₃N₄, which can effectively inhibit the recombination of photogenerated electron–hole pairs, improve the mobility of photogenerated carriers, and thus improve the photocatalytic performance. In this study, NaCl was used as a template, and the loose and porous g-C₃N₄/TiO₂ heterojunction composite photocatalysts were prepared by the template method. Compared to the pure g-C₃N₄ prepared by the conventional thermal polycondensation method and TiO₂, the g-C₃N₄/TiO₂ heterojunction composite photocatalysts prepared in this study exhibited a greatly increased specific surface area, an improved light absorption performance, a significantly suppressed recombination of photogenerated electrons and holes. Furthermore, the g-C₃N₄/TiO₂ heterojunction composite photocatalysts exhibited excellent photocatalytic performance.

Antimony-based materials possess high theoretical capacities and suitable potential, which could be promising anode materials for sodium-ion batteries (SIB). However, poor stabilities and sluggish kinetics are drawbacks. Building heterojunction is an ideal method to solve these issues. Its unique structure develops internal electric fields spontaneously to boost the charge transport and relieve stress. Nevertheless, the controllable preparation of face-to-face (2D) heterojunctions is still hard-pressed. Herein, ${\mathrm{\text{Sb}}}_2{\mathrm{\text{Te}}}_3$–$\mathrm{\text{Te}}$ nanoheterojunctions, which consist of two-dimensional ${\mathrm{\text{Sb}}}_2{\mathrm{\text{Te}}}_3$–$\mathrm{\text{Te}}$ nanoblades attached to a one-dimensional Te nanorod, are fabricated through a two-step solvothermal method. Among that, the density of nanoblades is adjustable through the engineering feed ratio. When employed as anodes for SIBs, ${\mathrm{\text{Sb}}}_2{\mathrm{\text{Te}}}_3$–$\mathrm{\text{Te}}$ nanoheterojunctions display a reversible capacity of 463.2mAhg${}^{-1}$ at 100mAg${}^{-1}$. Even a capacity of 305.5mAhg${}^{-1}$ remains after 1000 cycles under a high current of 1.5Ag${}^{-1}$. Moreover, the density functional theory (DFT) calculations also identify the high conductivity of heterojunction. This work offers an effective way to design the structures and properties of heterojunctions, further expanding their application range.

Two-dimensional $\alpha$-In₂Se₃ exhibits simultaneous intercorrelated in-plane and out-of-plane polarization, making it a highly promising material for use in memories, synapses, sensors, detectors, and optoelectronic devices. With its narrow bandgap, $\alpha$-In₂Se₃ is particularly attractive for applications in photodetection. However, relatively little research has been conducted on the out-of-plane photoconductive and bulk photovoltaic effects in $\alpha$-In₂Se₃. This limits the potential of $\alpha$-In₂Se₃ in the device innovation and performance modification. Herein, we have developed an $\alpha$-In₂Se₃-based heterojunction with a transparent electrode of two-dimensional Ta₂NiS₅. The out-of-plane electric field can effectively separate the photo-generated electron–hole pairs in the heterojunction, resulting in an out-of-plane responsivity (R), external quantum efficiency (EQE), and specific detectivity ($D^{*}$) of 0.78mA/W, 10${}^{-3}$% and $1.14\times 10^8$ Jones, respectively. The out-of-plane bulk photovoltaic effect has been demonstrated by changes in the short circuit current (SCC) and open circuit voltage ($V_{\mathrm{\text{oc}}}$) with different optical power intensity and temperature, which indicates that $\alpha$-In₂Se₃-based heterojunctions has application potential in mid-far infrared light detection based on its out-of-plane photoconductive and bulk photovoltaic effects. Although the out-of-plane photoconductive and bulk photovoltaic effects are relatively lower than that of traditional materials, the findings pave the way for a better understanding of the out-of-plane characteristics of two-dimensional $\alpha$-In₂Se₃ and related heterojunctions. Furthermore, the results highlight the application potential of $\alpha$-In₂Se₃ in low-power device innovation and performance modification.