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THE PHOTOIONIZATION CROSS-SECTION AND BINDING ENERGY OF IMPURITIES IN QUANTUM WIRES: EFFECTS OF THE ELECTRIC AND MAGNETIC FIELD
Preview AbstractUsing a variational approach, we have calculated the impurity position dependence of the photoionizaton cross-section and the binding energy for a hydrogenic donor impurity in a quantum well wire in the presence of the electric and magnetic field as a function of the photon energy. Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on the applied electric and magnetic field, and the impurity position.