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EFFECT OF CAPPING LAYER ON InxGa1-xN QUANTUM DOTS GROWN USING NNAD METHOD BY MOCVD
Preview AbstractInxGa1-xN quantum dots (QDs) were grown on GaN epitaxy using nitridation of nano-alloyed droplet (NNAD) method by metal-organic chemical vapor deposition (MOCVD) system. Before the InxGa1-xN QDs formation, In + Ga droplets were initially formed by the flow of TMI and TMG, which acts as a nucleation seed for the QDs growth. Density of the alloy droplets was increased with the increasing flow rate; however, droplet size was scarcely changed about 100–200 nm by flow rate. And InxGa1-xN QDs size can be easily changed by controlling the nitridation time or various factors. Also, the influence of GaN capping layer on the properties of InxGa1-xN QDs was discussed.