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(Pb,La)TiO₃ (PLT) and Pb(Zr,Ti)O₃ (PZT) thin films were deposited on Pt/SiO₂/Si substrate by metal-organic chemical vapor deposition (MOCVD) using a solid delivery system. The domain configurations of the deposited PLT thin films were investigated, and the film with a columnar structure exhibited a very stable write/read operation for the domain memory application. Electrical properties of PLT, PZT and rf-sputter-deposited (Ba,Sr)TiO₃ (BST) thin films were measured, and their conduction mechanisms were analyzed. The composition and thickness uniformity of BST thin films deposited by the low temperature MOCVD method on a patterned wafer with 0.15 μm-diameter contact holes were investigated, and complete thickness and composition uniformity were obtained especially for the case of a dome-wall-type chamber with a wall temperature of 450°C.

Zirconium silicate (Zr_xSi_1-xO₂) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200–300°C was used to deposit films with uniform thickness. The grown films showed the Zr-rich composition, which is thought to induce the Zr-silicide formation at the interface of the silicate and Si substrate. The film composition and chemical binding states were investigated by XPS depth profiling measurements.

Evolution of morphology change was investigated for ZnO nanoneedle array grown by low-temperature MOCVD. Well-aligned ZnO nanoneedle array was deposited on the ZnO buffer-film/Si substrate at temperatures below 500°C. A rod-shaped ZnO nanowire in the initial growth stage changed into needle-shaped as the deposition proceeds. ZnO nanoneedle array deposited on the annealed buffer-film showed better alignment compared to that deposited on the as-grown film. XPS analysis showed that Zn 2p peak has a single binding energy state of a stoichiometric Zn–O bond while O 1 s peak has three different chemical binding states. Highly crystalline ZnO nanoneedle array showed a strong bandedge emission at 380 nm in photoluminescence measurements.