[Author: Kanai, Shun] AND [Keyword: Mgo] : Search

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articleNo Access
RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI
SPIN01 Sep 2012
Preview Abstract
We review recent developments in magnetic tunnel junctions with perpendicular easy axis (p-MTJs) for nonvolatile very large scale integrated circuits (VLSIs). So far, a number of material systems such as rare-earth/transition metal alloys, L1₀-ordered (Co, Fe)–Pt alloys, Co/(Pd, Pt) multilayers, and ferromagnetic-alloy/oxide stacks have been proposed as electrodes in p-MTJs. Among them, p-MTJs with single or double ferromagnetic-alloy/oxide stacks, particularly CoFeB–MgO, were shown to have high potential to satisfy major requirements for integration.

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