Narrow Results

We investigate the transitions between two minibands in a semiconductor superlattice under the influence of high static electric fields. Our numerical calculation, which is based on the two energy levels system, shows that this interminiband transition will lead to anticrossings that can be determined by the coupled Hamiltonian. In the time domain, spatial oscillations come forth between the main locations of the particle in the two transition states. At the anticrossings, the amplitudes are the maximum which agree with the experimental results.

An analysis is made of the low-temperature behavior of the chemical potential $\mu$ of a quasi-two-dimensional electron gas near the resonance point (at the bottom of the miniband) and far from it. Low-temperature analytical formulas for $\mu (T)$ are obtained under the conditions of the existence of an arbitrary number of minibands. It is shown that with the increasing temperature near the resonance point, the chemical potential decreases linearly and exponentially slowly in the middle of the resonance points. Analytical formulas are compared to the numerical solutions.