Processing math: 100%
Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

SEARCH GUIDE  Download Search Tip PDF File

  • articleNo Access

    CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR

    In this paper, our focus is on ABA trilayer graphene nanoribbon (TGN), in which the middle layer is horizontally shifted from the top and bottom layers. The conductance model of TGN as a FET channel is presented based on Landauer formula. Besides the good reported agreement with experimental study lending support to our model, the presented model demonstrates that minimum conductivity increases dramatically by temperature. It also draws parallels between TGN and bilayer graphene nanoribbon, in which similar thermal behavior is observed. Maxwell–Boltzmann approximation is employed to form the conductance of TGN near the neutrality point. Analytical model in degenerate regime in comparison with reported data proves that TGN-based transistor will operate in degenerate regime like what we expect in conventional semiconductors. Moreover, our model confirms that in similar condition, the conductivity of TGN is less than bilayer graphene nanoribbon as reported in some experiments.

  • articleNo Access

    Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes

    A new model for efficiency droop in InGaN/GaN light-emitting diodes (LEDs) is proposed, where the primary nonradiative recombination mechanisms, including Shockley–Read–Hall (SRH), Auger and carrier leakage, are considered. A room-temperature external quantum efficiency (EQE) measurement was performed on our designed samples and analyzed by the new model. Owing to advantages over the common “ABC+f(n) model”, the “new model” is able to effectively extract recombination coefficients and calculate the leakage currents of the hole and electron. From this new model, we also found that hole leakage is distinct at low injection, while it disappears at high injection, which is contributed to the weak blocking effect of electron in quantum wells (QWs) at low injection.

  • articleNo Access

    An extended lattice hydrodynamic model with time delay based on non-lane discipline

    An extended lattice hydrodynamic model with time delay is proposed under non-lane discipline. We try to grasp the impacts of the non-lane discipline of the considered lattice sites. Linear stability analysis of the proposed model is executed and the stability criterion is obtained. Using the reductive perturbation method, we investigate nonlinear analysis of the proposed model and derive the mKdV equation and its solution, which could reveal the propagation of density waves. We analyze the effect of time delay, the ratio of lane deviation and the control coefficient on the stability of traffic flow via numerical experiments. We find that those indices play an important role in the stability of traffic flow. The longer the time delay, the more unstable the system becomes. Also, the ratio of lane deviation and the control coefficient is able to more quickly dissipate the traffic congestions occurring in traffic flow.