Narrow Results

This paper introduces a new technique for analyzing the behavior of global interconnects in FPGAs, for nanoscale technologies. Using this new enhanced modeling method, new enhanced accurate expressions for calculating the propagation delay of global interconnects in nano-FPGAs have been derived. In order to verify the proposed model, we have performed the delay simulations in 45 nm, 65 nm, 90 nm, and 130 nm technology nodes, with our modeling method and the conventional Pi-model technique. Then, the results obtained from these two methods have been compared with HSPICE simulation results. The obtained results show a better match in the propagation delay computations for global interconnects between our proposed model and HSPICE simulations, with respect to the conventional techniques such as Pi-model. According to the obtained results, the difference between our model and HSPICE simulations in the mentioned technology nodes is (0.29–22.92)%, whereas this difference is (11.13–38.29)% for another model.

Dual radio frequency (RF) powers are widely used with commercial plasma etchers for various nanoscale patterns. However, it is challenging to understand the relationship among the dual RF powers and the etching processes. In this work, the effect of the dual RF bias powers on SiO₂ sputter etching was investigated in inductively coupled plasma (ICP). The relationship was studied among 2MHz and 27.12MHz RF bias powers, a 13.56MHz ICP source power, the ion bombardment energy, the ion density and the etching rate. The results show that the ion density of Ar plasma can be controlled in the region of 10⁹–10${}^{11}$ ions/cm³, and DC self-bias can be controlled by controlling the ratio of dual RF bias powers while the ion density is maintained with the operation of source power. This work reveals that the dual RF bias powers expand the process window of the ion density and the ion bombardment energy independently in the ICP plasma source. The sputter etching rate is also modeled using the ion-enhanced etching model, and the model shows good agreement with the etching rate data.

Due to the various applications of nanocantilevers as nanosensors and nanoactuators in nanoelectromechanical systems, understanding their behavior is of particular importance. In operating environments, nanocantilevers are simultaneously exposed to mechanical forces and heat. This study aims to examine the behavior of an Euler–Bernoulli nanocantilever when it is placed under mechanical loads and exposed to heat at the same time. The effects of size, temperature, and force on the flexural behavior of the nanocantilever were investigated and the following characteristics were obtained via molecular dynamics simulation: nanocantilever displacement versus time, maximum bending, nanocantilever yielding time, and the minimum acceptable working frequency range for nanocantilever-based nanoswitches. It was found that applying forces greater than 0.00005eV/A, the studied nanocantilevers would rapidly undergo plastic deformation. For applied forces less than 0.00005eV/A, the nanocantilevers with length of 40nm, 30nm and 20nm can withstand upto 750K, 600K and 300K in 200ns to more than 1.5$\mu$s time period, respectively.

In this paper, we concern with the dynamic behaviors of a high speed mass measurement system with conveyor belt (a checkweigher). The goal of this paper is to construct a simple model of the measurement system so as to duplicate a response of the system. The checkweigher with electromagnetic force compensation can be approximated by the combined spring-mass-damper systems as the physical model, and the equation of motion is derived. The model parameters (a damping coefficient and a spring constant) can be obtained from the experimental data for open-loop system. Finally, the validity of the proposed model can be confirmed by comparison of the simulation results with the realistic responses. The simple dynamic model obtained offers practical and useful information to examine control scheme.