Narrow Results

This paper introduces a new technique for analyzing the behavior of global interconnects in FPGAs, for nanoscale technologies. Using this new enhanced modeling method, new enhanced accurate expressions for calculating the propagation delay of global interconnects in nano-FPGAs have been derived. In order to verify the proposed model, we have performed the delay simulations in 45 nm, 65 nm, 90 nm, and 130 nm technology nodes, with our modeling method and the conventional Pi-model technique. Then, the results obtained from these two methods have been compared with HSPICE simulation results. The obtained results show a better match in the propagation delay computations for global interconnects between our proposed model and HSPICE simulations, with respect to the conventional techniques such as Pi-model. According to the obtained results, the difference between our model and HSPICE simulations in the mentioned technology nodes is (0.29–22.92)%, whereas this difference is (11.13–38.29)% for another model.

Dual radio frequency (RF) powers are widely used with commercial plasma etchers for various nanoscale patterns. However, it is challenging to understand the relationship among the dual RF powers and the etching processes. In this work, the effect of the dual RF bias powers on SiO₂ sputter etching was investigated in inductively coupled plasma (ICP). The relationship was studied among 2MHz and 27.12MHz RF bias powers, a 13.56MHz ICP source power, the ion bombardment energy, the ion density and the etching rate. The results show that the ion density of Ar plasma can be controlled in the region of 10⁹–10${}^{11}$ ions/cm³, and DC self-bias can be controlled by controlling the ratio of dual RF bias powers while the ion density is maintained with the operation of source power. This work reveals that the dual RF bias powers expand the process window of the ion density and the ion bombardment energy independently in the ICP plasma source. The sputter etching rate is also modeled using the ion-enhanced etching model, and the model shows good agreement with the etching rate data.

Due to the various applications of nanocantilevers as nanosensors and nanoactuators in nanoelectromechanical systems, understanding their behavior is of particular importance. In operating environments, nanocantilevers are simultaneously exposed to mechanical forces and heat. This study aims to examine the behavior of an Euler–Bernoulli nanocantilever when it is placed under mechanical loads and exposed to heat at the same time. The effects of size, temperature, and force on the flexural behavior of the nanocantilever were investigated and the following characteristics were obtained via molecular dynamics simulation: nanocantilever displacement versus time, maximum bending, nanocantilever yielding time, and the minimum acceptable working frequency range for nanocantilever-based nanoswitches. It was found that applying forces greater than 0.00005eV/A, the studied nanocantilevers would rapidly undergo plastic deformation. For applied forces less than 0.00005eV/A, the nanocantilevers with length of 40nm, 30nm and 20nm can withstand upto 750K, 600K and 300K in 200ns to more than 1.5$\mu$s time period, respectively.

Environmentally responsible and minimal natural variation in electric power generation has been a goal of researchers for several decades. With the establishment of the electrical power generation potential from microalgae’s photosynthesis, several researchers revealed interesting microbial fuel cell configurations to improve the output of electrical parameters. However, little work is done to understand the electrical charge collected from photosynthesis. This article proposes a fuel cell-based electrochemical modeling of the micro-photosynthetic power cell. The model is developed, excluding significant analytical assumptions at stationary conditions. Due to the complexity of modeling the electron release from photosynthesis, the electron release reactions are substituted with a simpler redox coupler of similar electric potential to that of photosynthesis. The micro-photosynthetic power cell revealed that the electron collection rate does not directly correlate to the photosynthesis electron chain. It might remain constant for a specific electrical load. The peak power is obtained at a different operating loading than the internal resistance of the device. The experimental open circuit voltage ($\sim$0.96V) and the peak power ($\sim$0.18mW) are predicted accurately by this modeling approach. The results show that the fill factor remains constant with respect to several effective electrode surface areas. Based on this theoretical modeling, we believe that with optimized algal physiological state and micro-photosynthetic power cell’s effective surface area, this micro-photosynthetic power cell will be useful for application in low-power applications.

A new modeling and parameter extraction methodology to represent the parasitic effects associated with shielded test structures is presented in this paper. This methodology allows to accurately account for the undesired effects introduced by the test fixture when measuring on-wafer devices at high frequencies. Since the proposed models are based on the physical effects associated with the structure, the obtained parameters allow the identification of the most important parasitic components, which lead to potential measurement uncertainty when characterizing high-frequency devices. The proposed methodology is applied to structures fabricated on different metal levels in order to point out the advantages and disadvantages in each case. The validity of the modeling and characterization methodology is verified by achieving excellent agreement between simulations and experimental data up to 50 GHz.