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Laser texturing assisted with electrochemical machining (LT-ECM) is combined the high efficiency of laser machining and the high surface quality of electrochemical machining. The light-trapping structures are mainly formed by laser action and the slag produced in laser texturing is removed by electrochemical machining. In order to obtain the better textured quality, parameters optimization for LT-ECM has been carried out in this paper. Three important parameters such as pulse laser energy and applied electrochemical have been optimized to improve the optical property of mc-Si. The textured surface reflectance (TSR) and the slag removal rate (SRR) have been used as the evaluation indicators to evaluate the textured results on mc-Si by LT-ECM. The experiments were performed on 30×30mm² mc-Si wafer with pulsed Nd:YAG laser at second harmonic wavelength and NaOH solution. The experimental results showed that pulse laser energy has the most significant influence on TSR. Applied electrochemical voltage has significant influence on SRR. Optimized parameters for LT-ECM are: pulse laser energy is about 30mJ; electrochemical applied voltage is about 15V.