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A novel photoelectric device-Lateral PIN photodiode gated by a transparent electrode (LPIN PD-GTE) fabricated on SOI film is proposed. Its physical model is presented based on standard semiconductor equations. In this device, recombination of carriers is ignored due to its operation in depletion region and high electric field strength (E > 1 × 10⁴V/m). Numerical calculation indicates that LPIN PD-GTE has high sensitivity and SNR (Signal to Noise Ratio). This model allows one to predict and optimize the photoelectric characteristics of LPIN PD-GTE.