Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

SEARCH GUIDE  Download Search Tip PDF File

  • articleNo Access

    MEASUREMENT OF YOUNG'S MODULUS AND POISSON'S RATIO OF THIN FILMS BY SYNCHROTRON X-RAY DIFFRACTION

    A new experimental method for determining elastic constants of thin films is proposed. The curvatures of the single crystal substrates before and after depositing thin film are first measured using high-resolution X-ray rocking curve technique with high quality monochromatic and high intensity synchrotron radiation. The residual stress in the film is then calculated from the change in substrate curvature based on the well-known modified Stoney's equation. The formulae for calculating thin film's Young's modulus and Poisson's ratio are deduced based on measured residual stress and the lattice spacing dψ versus sin2ψ curves of the film before and after an unknown mechanical loading. LaNiO3 film grown on single crystal silicon substrate using pulsed laser deposition is employed to demonstrate the measurement method.