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During these last years, the substantially biological field effect transistors (BioFET) are one of the most abundant classes of electronic sensors for biomolecular detection. The determination of glucose levels using these biosensors, especially in the medical diagnosis and food industries, is gaining popularity. Among them, ion-sensitive field effect transistor (ISFET) is considered one of the most intriguing approaches in electrical biosensitivity technology. The glucose sensor ISFET detects the glucose molecule by catalyzing glucose to gluconic acid and hydrogen peroxide in the presence of oxygen. In this paper, first of all we examine some of the main advantages in this field, the perspective of applications and the main issues in order to stimulate a broader interest in the development of biosensors based on ISFET and to extend their applications for a reliable and sensitive glucose analysis. Thereafter, a biosensor with field effect sensitive to the ions for the detection of glucose is modeled analytically. In the proposed model, the glucose concentration is presented according to the gate voltage. The simulated data show that the analytical model can be used with an electrochemical glucose sensor to predict mechanism’s behavior of detection in the biosensors.

An analytical model of the channel electron energy distribution in an on-state GaN transistor has been proposed based on the assumption that drift velocities of channel electrons obey the two-dimensional Maxwell–Boltzmann distribution. The validity of such an assumption was confirmed by Monte Carlo simulation. It was found that there could be a larger number of high-energy channel electrons whose energy is higher than the intervalley energy between ${\mathrm{\Gamma }}_1$ and ${\mathrm{\Gamma }}_2$ valleys in a GaN transistor with a high electron temperature. The fraction of hot electrons with its energy higher than the intervalley energy between ${\mathrm{\Gamma }}_1$ and ${\mathrm{\Gamma }}_2$ valleys to the total channel electrons can easily reach 50% when the electron temperature is higher than 3000 K. Such an electron temperature in a GaN transistor had been determined in experiments. Thus, hot electrons in the ${\mathrm{\Gamma }}_1$ valley can transit into ${\mathrm{\Gamma }}_2$ valleys. It suggests that intervalley transitions could be one possible physical origin of the abrupt change in the source−drain current in GaN devices. The proposed model can well explain how an abrupt change in the source–drain current in GaN transistor experiments depends on the voltage-dependent gate, the trap, etc.

Phthalocyanines are organic-based materials which have attracted a lot of research in recent times. In the field of sensors, they present interesting and valuable potentialities as sensing elements for real gas sensor applications. In the present article, and taking some of our experiments as representative examples, we review the different ways of transduction applied to such applications. Some of the new tendencies and transducers for gas sensing based on phthalocyanine derivatives are also reported. Among them, electrical transduction (resistors, field-effect transistors, diodes, etc.) has been, historically, the most commonly exploited way for the detection and/or quantification of gas pollutants, vapors and aromas, according to the conducting behavior of phthalocyanines. We will focus precisely on these systems.

Progress in electronics is limited by power dissipation constraints. Ferroelectric materials with a negative capacitance could help to overcome these limits. Especially, HfO₂ and ZrO₂ based ferroelectrics are promising for negative capacitance electronics due to their compatibility with modern transistor manufacturing processes. Recently, first negative capacitance transistors have been demonstrated. However, further investigations on the microscopic origin of negative capacitance in HfO₂- and ZrO₂-based ferroelectrics are needed. Lastly, opportunities for negative capacitance beyond transistors are discussed.