International Journal of Modern Physics B

We have studied the physical properties of Li-doped compound Fe₂As, which is isostructural to the famous iron-based superconductor LiFeAs. The results indicate that both a-axis and c-axis of Li_xFe_2-xAs increases with the increase in Li content when it is less than 0.2. The Néel temperature of Li_xFe_2-xAs decreases with the increase in Li content, which may be related to the changes of distance for Fe_II–Fe_II layers. The resistivity of Li_xFe_2-xAs is similar to that of Fe₂As at low doping level 0–0.2. As the doping amount is increased to 0.9, the resistivity of Li_xFe_2-xAs approaches the value of LiFeAs.

We study the density of states of zigzag carbon nanotube (CNT) doped with both Boron and nitrogen atoms as donor and acceptor impurities, respectively. The effect of scattering of the electrons on the electronic spectrum of the system can be obtained via adding random on-site energy term to the tight binding model Hamiltonian which describes the clean system. Green's function approach has been implemented to find the behavior of electronic density. Due to Boron (Nitrogen) doping, Fermi surface tends to the valence (conduction) band of semiconductor CNT so that the energy gap width reduces. Furthermore the density of states of disordered metallic zigzag CNTs includes a peak near the Fermi energy.

In this paper, we introduce an approach to increase integration rate of bipolar heterotransistors. The approach based on doping of required parts of heterostructure by diffusion or implantation and optimization of annealing of dopant and/or radiation defects. As simplification of the considered approach to increase integration rate we consider possibility to used common collector.

Based on the compact density matrix approach, the linear and nonlinear refractive index change (RIC) and optical rectification (OR) coefficients in a GaN-based step QW with strong built-in electric field (BEF) have been theoretically deduced and investigated in detail. The analytical electronic state is derived by the two airy functions. And the band nonparabolicity is taken into account by using an energy dependence effective mass (EDEM) method. Numerical calculations on a four-layer AlN/GaN/Al_xGa_1-xN/AlN step QW are performed, and the curves for the geometric factors, the linear, the nonlinear, the total RICs and the OR coefficients as functions of the structural parameters of the step QW are discussed. The features for these curves were specified and reasons for the features were explained reasonably. It is found that the decreasing of well width L_w, and step barrier width L_b and the doped concentration x in step barrier will result in the significant enhancement of the RICs. With the decrease of L_w, L_b and x, the resonant photon energies of RIC and OR coefficients have obvious blue-shift. Moreover, the RIC and OR coefficients behave different dependence on the structural parameters of the GaN-based step QWs. The profound physical reasons are also analyzed.

The temperature behavior of thermal conductivity of zigzag carbon nanotube (CNT) doped with boron atoms, as acceptor impurities, has been investigated in the context of tight binding model hamiltonian. A local energy term is added to the hamiltonian of the original clean system in order to obtain the effect of scattering of the electrons from impurities on the electronic spectrum. Green's function approach has been implemented to find the behavior of thermal conductivity of CNTs within linear response theory. Depending on the temperature regions, thermal conductivity shows two different behaviors. Thermal transport is found to be decreasing with dopant concentration at low temperatures. It is not the case of higher temperatures where thermal conductivity rises due to increase of boron concentration.

Transport and efficiency of over-damped Brownian particles moving in a confined narrow channel is investigated in the presence of an oscillating force and a static load force. It is found that the average velocity increases monotonously with the unbiased external driving force, while the efficiency can be a peaked function of unbiased external force, which indicates that the unbiased external force can facilitate the efficiency of energy transformation. Moreover, the average velocity and the efficiency demonstrate complex behaviors due to the consideration of Stokes efficiency.

In this paper, a kind of sandwich phononic crystal (PC) plate with silicon rubber scatterers embedded in polymethyl methacrylate (PMMA) matrix is proposed to demonstrate its low-frequency Lamb wave band gap (BG) characteristics. The dispersion relationship and the displacement vector fields of the basic slab modes and the locally resonant modes are investigated to show the BG formation mechanism. The anti-symmetric Lamb wave BG is further studied due to its important function in reducing vibration. The analysis on the BG characteristics of the PC through changing their geometrical parameters is performed. By optimizing the structure, a sandwich PC plate with a thickness of only 3 mm and a lower boundary (as low as 23.9 Hz) of the first anti-symmetric BG is designed. Finally, sound insulation experiment on a sandwich PC plate with the thickness of only 2.5 mm is conducted, showing satisfactory noise reduction effect in the frequency range of the anti-symmetric Lamb BG. Therefore, this kind of sandwich PC plate has potential applications in controlling vibration and noise in low-frequency ranges.

We carried out ab initio calculations of structural, electronic and optical properties of Indium nitride (InN) compound in both zinc blende and wurtzite phases, using the full-potential linearized augmented plane wave method (FP-LAPW), within the framework of density functional theory (DFT). For the exchange and correlation potential, local density approximation (LDA) and generalized gradient approximation (GGA) were used. Moreover, the alternative form of GGA proposed by Engel and Vosko (EV-GGA) and modified Becke–Johnson schemes (mBJ) were also applied for band structure calculations. Ground state properties such as lattice parameter, bulk modulus and its pressure derivative are calculated. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show good agreement with the available data. The calculated band structure shows a direct band gap Γ → Γ. In the optical properties section, several optical quantities are investigated; in particular we have deduced the interband transitions from the imaginary part of the dielectric function.

Label propagation algorithm (LPA) has been proven to be an extremely fast method for community detection in large complex networks. But an important issue of the algorithm has not yet been properly addressed that random update orders in label propagation process hamper the algorithm robustness of algorithm. We note that when there are multiple maximal labels among a node neighbors' labels, choosing a node' label from which there is a local cycle to the node instead of a random node' label can avoid the labels propagating among communities at random. In this paper, an improved LPA based on local cycles is given. We have evaluated the proposed algorithm on computer-generated networks with planted partition and some real-world networks whose community structure are already known. The result shows that the performance of the proposed approach is even significantly improved.

In this study, the resonant peaks of the linear optical absorption (OA) and rectification coefficients in GaAs/GaAlAs quantum well are calculated as dependent on the applied electric field (F), the magnetic field (B) and the laser field intensity parameter (α₀). Our results show that the shape of confined potential profile, the energy levels and the dipole moment matrix elements are changed as dependent on the F, B and α₀. Also, the resonant peaks of the OA and rectification coefficients depend on the applied external field effects. Therefore, the variation of the resonant peaks of these coefficients which can be appropriate for various optical modulators and infrared optical device applications can be smoothly obtained by the alteration electric, magnetic and intense laser field.