SPIN

Experiments observing spin density and spin currents (responsible for, e.g., spin-transfer torque) in spintronic devices measure only the nonequilibrium contributions to these quantities, typically driven by injecting unpolarized charge current or by applying external time-dependent fields. On the other hand, theoretical approaches to calculate these quantities operate with both the nonequilibrium (carried by electrons around the Fermi surface) and the equilibrium (carried by the Fermi sea electrons) contributions to them. Thus, an unambiguous procedure should remove the equilibrium contributions, thereby rendering the nonequilibrium ones which are measurable and satisfy the gauge-invariant condition according to which expectation values of physical quantities should not change when electric potential everywhere is shifted by a constant amount. Using the framework of nonequilibrium Green functions, we delineate such procedure which yields the proper gauge-invariant nonequilibrium density matrix in the linear-response and elastic transport regime for current-carrying steady state of an open quantum system connected to two macroscopic reservoirs. Its usage is illustrated by computing: (i) conventional spin-transfer torque (STT) in asymmetric F/I/F magnetic tunnel junctions (MTJs); (ii) unconventional STT in asymmetric N/I/F semi-MTJs with the strong Rashba spin–orbit coupling (SOC) at the I/F interface and injected current perpendicular to that plane; and (iii) current-driven spin density within a clean ferromagnetic Rashba spin-split two-dimensional electron gas (2DEG) which generates SO torque in laterally patterned N/F/I heterostructures when such 2DEG is located at the N/F interface and injected charge current flows parallel to the plane. We also compare our results for these three examples with those that would be obtained using improper expressions for the density matrix, which are often found in the literature but which arbitrarily mix nonequilibrium and equilibrium expectation values due to a violation of the gauge invariance.

This paper reviews the recent developments on building nanoelectronics for our future information processing paradigm using multiferroic composites. With appropriate choice of materials, when a tiny voltage of few tens of millivolts is applied across a multiferroic composite, i.e., a piezoelectric layer stain-coupled with a magnetostrictive layer, the piezoelectric layer gets strained and the generated stress in the magnetostrictive layer switches the magnetization direction between its two stable states. We particularly review the switching dynamics of magnetization and calculation of associated metrics like switching delay and energy dissipation. Such voltage-induced magnetization switching mechanism dissipates a minuscule amount of energy of only ~ 1 attojoule in sub-nanosecond switching delay at room-temperature. The performance metrics for such nonvolatile straintronic devices make them very attractive for building not only memory devices but also building logic, so that they can be deemed suitable for computational purposes. Hence, multiferroic straintronics has profound promise of contributing to beyond Moore's law technology, i.e., of being possible replacement of conventional charge-based electronics, which is reaching its performance limit specifically due to excessive energy dissipation.

The mutual interaction between spin current and magnetization is a key phenomenon in spintronics. This interaction leads to a spinmotive force, a mechanism of energy-transfer from magnetization into conduction electrons. In this paper, the basic concepts and recent developments of the spinmotive force are introduced.

This paper presents a survey of the methods of statistical physics which are applied to the problem of thermal agitation in magnetic materials. The main focus of the work is the stochastic dynamics described by the Landau-Lifshitz-Gilbert equation for which most analytic results are known, and which has been most commonly used in numerical simulations. We also present the much more recent Landau–Lifshitz–Bloch equation and the numerical calculations describing magnetization dynamics close to the Curie point. The paper is concluded by a description of the newly introduced jump-noise and of the Barkhausen jumps.

Since the successful fabrication of graphene, two-dimensional hexagonal lattice structures have become a research hotspot in condensed matter physics. In this short review, we theoretically focus on discussing the possible realization of a topological insulator (TI) phase in systems of graphene bilayer (GBL) and boron nitride bilayer (BNBL), whose band structures can be experimentally modulated by an interlayer bias voltage. Under the bias, a band gap can be opened in AB-stacked GBL but is still closed in AA-stacked GBL and significantly reduced in AA- or AB-stacked BNBL. In the presence of spin–orbit couplings (SOCs), further demonstrations indicate whether the topological quantum phase transition can be realized strongly depends on the stacking orders and symmetries of structures. It is observed that a bulk band gap can be first closed and then reopened when the Rashba SOC increases for gated AB-stacked GBL or when the intrinsic SOC increases for gated AA-stacked BNBL. This gives a distinct signal for a topological quantum phase transition, which is further characterized by a jump of the ℤ₂ topological invariant. At fixed SOCs, the TI phase can be well switched by the interlayer bias and the phase boundaries are precisely determined. For AA-stacked GBL and AB-stacked BNBL, no strong TI phase exists, regardless of the strength of the intrinsic or Rashba SOCs. At last, a brief overview is given on other two-dimensional hexagonal materials including silicene and molybdenum disulfide bilayers.

The present research is devoted to the investigation of the spin-dependant Goos–Hanchen phase shift in quantum nanodevice. This nanodevice is modeled as semiconducting quantum dot coupled to two ferromagnetic leads. The spin transport through such nanodevice is conducted under the effect of both magnetic field and the photon energy of the induced ac-field. The angle of incidence of electrons is taken into account. Results show that the Goos–Hanchen phase shift of spin-up electrons is different from that of spin-down electron. Also, spin polarization and giant magneto-resistance are strongly depending on the angle of incidence of electrons and the photon energy of the induced ac-field. The present model could realize experimentally the spin beam splitter and spin filter needed for spin qubits and quantum information processing.

Multivalued logic devices are promising candidates for achieving high-density, low-power memory and logic functionalities. We present a room-temperature ferromagnetic (FM) multilayer Hall junction device with four distinct resistance — and thus logic — states. The states can be encoded as a quaternary bit and decoded into two binary bits. We experimentally demonstrate a nonvolatile full adder that is based on a single Hall junction, the extraordinary Hall balance (EHB). The device can be easily integrated into complex logic circuits for logic-in-memory architectures.