SPIN

In this paper, we employ semiclassical Monte Carlo approach to study spin polarized transport in InP and strained InP nanowires on GaAs substrate. Due to higher spin relaxation lengths, InP is being researched as suitable III–V material for spintronics related applications. Spin relaxation in InP channel is as a result of D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. We have considered injection polarization along z-direction and the magnitude of ensemble averaged spin variation is studied along the x-direction i.e., along transport direction. The effect of strain on various scattering rates and spin relaxation length is studied. We then present the effect of variation of nanowire width on spin relaxation length for the case of both strained and unstrained InP nanowire. The wire cross-section is varied between 4 × 4 nm² and 10 × 10 nm².

With the growing concerns of standby power in sub-100-nm CMOS technologies, alternative computing techniques and memory technologies are explored. Spin transfer torque magnetoresistive RAM (STT-MRAM) is one such nonvolatile memory relying on magnetic tunnel junctions (MTJs) to store information. It uses spin transfer torque to write information and magnetoresistance to read information. In 2012, Everspin Technologies, Inc. commercialized the first 64Mbit Spin Torque MRAM. On the computing end, nanomagnetic logic (NML) is a promising technique with zero leakage and high data retention. In 2000, Cowburn and Welland first demonstrated its potential in logic and information propagation through magnetostatic interaction in a chain of single domain circular nanomagnetic dots of Supermalloy (Ni₈₀Fe₁₄Mo₅X₁, X is other metals). In 2006, Imre et al. demonstrated wires and majority gates followed by coplanar cross wire systems demonstration in 2010 by Pulecio et al. Since 2004 researchers have also investigated the potential of MTJs in logic. More recently with dipolar coupling between MTJs demonstrated in 2012, logic-in-memory architecture with STT-MRAM have been investigated. The architecture borrows the computing concept from NML and read and write style from MRAM. The architecture can switch its operation between logic and memory modes with clock as classifier. Further through logic partitioning between MTJ and CMOS plane, a significant performance boost has been observed in basic computing blocks within the architecture. In this work, we have explored the developments in NML, in MTJs and more recent developments in hybrid MTJ/CMOS logic-in-memory architecture and its unique logic partitioning capability.

Basing on Dirac equation for interacting massless fermions, we propose a nonlinear model that describes a possible mechanism of ferromagnetism in graphene structures, resulting from electron–electron interaction and spontaneous breaking of spin symmetry of valence electrons. Qualitative predictions of the model are important for practical applications in spintronics. Localized kink–antikink patterns of valence electron spin density on the graphene surface are calculated, their interaction is described, and, finally, the formation of their quasi-bound metastable states (breathers) is investigated. The spectrum of breathers is calculated in both the analytical and the numerical form. Possible inverted population of the appropriate states may be used to generate quantum coherent nonlinear spin waves that can find practical applications in nanoelectronics and spintronics.

The paper presents the results of experimental studies of the physical mechanisms and dynamics of magnetization reversal of the films Al₂O₃/Tb₂₅Co₅Fe₇₀/Al₂O₃, Al₂O₃/Tb₂₂Co₅Fe₇₃/Al₂O₃, Al₂O₃/Tb₁₉Co₅Fe₇₆/Al₂O₃, Al₂O₃/Co₃₀Fe₇₀/Al₂O₃ with a single magnetic layer and the films Al₂O₃/Tb₂₂Co₅Fe₇₃/Pr₆O₁₁/Tb₁₉Co₅Fe₇₆/Al₂O₃, Al₂O₃/Co₈₀Fe₂₀/Pr₆O₁₁/Co₃₀Fe₇₀/Al₂O₃ with two magnetic layers radiated by picosecond (τ_i ≈ 80 ps) and femtosecond (τ_i ≈ 130 fs) laser pulses. The experimental samples of spin transistors and data recording devices on the spin storage medium are also described. The results of studies have shown that magnetic switching effects in the nanolayers under femtosecond laser pulses can be used for creation of systems of high-speed controlling of spin currents with the response time τ ≤ 10^-11s. Conclusions from the studies are the following: thermomagnetic switching under the influence of an external magnetic field or a demagnetization field, magnetic switching of antiferromagnetic films under the influence of an effective internal field of antiferromagnetic interaction between magnetic sublattices rare-earth and transitive metals, magnetic switching under the influence of a magnetic field of the inverse Faraday effect, or under the influence of a magnetic field of a spin current. The magnetic switching of magnetic layers under action of the magnetic field of a spin current is the most important for practical use in elements of spintronics. This mechanism of magnetic reversal takes place only in multilayer nanofilms and the heterogeneous multilayer magnetic nanofilms are the base material for creation of spintronic devices. The great advantage of the magnetization reversal of magnetic nanolayers of the spin current is that the mechanism of magnetization reversal is working in the films with perpendicular anisotropy and in the films with in-plane anisotropy. The injection of polarized electrons can also be realized using short electrical pulses. That is why the mechanism of magnetization reversal of the control electrodes spin current is the most appropriate for the management of high-spin current in the elements of spintronics. On the basis of this mechanism, we have realized the high-speed recording of information on the spin carrier and the experimental model memory with three magnetic nanolayers. The data recording in this memory cell is realized using an electric nanosecond pulse.

We consider spin and charge transport in a Sierpinski planar carpet; the interest here is its unique geometry. We analyze the fractal conductor as a combination of multiply connected quantum wires, and we observe the evolution of the transmission envelope in different fractal generations. For a fractal conductor dominated by resonant modes the transmission is characterized by strong fluctuations and conduction gaps. We show that charge and spin transport have different responses both to the presence of defects and to applied bias. At a high bias, or in a high-order fractal generation, spin accumulation is separated from charge accumulation because the larger drift velocity needs a longer polarization length, and the sample may turn into an insulator by the action of the defects. Our results are calculated numerically using the Keldysh Green function within the tight-binding framework.