Crystal Growth for Beginners

The following sections are included:

• PREFACE TO THE FIRST EDITION
• PREFACE TO THE SECOND EDITION
• CONTENTS

The following sections are included:

• Equilibrium of Infinitely Large Phases
• Supersaturation
• Equilibrium of Finite Phases
  • Equation of Laplace
  • Equation of Thomson–Gibbs
• Equilibrium Shape of Crystals
  • Theorem of Gibbs–Curie–Wulff
    • Crystal in a three-dimensional medium
    • Crystal on a surface
      • Relation of Dupré
      • Equilibrium shape
  • Polar diagram of the surface energy
  • Herring's formula
  • Stability of crystal surfaces
• Atomistic Views on Crystal Growth
  • Equilibrium of infinitely large crystal with the ambient phase — The concept of half-crystal position
  • Equilibrium finite crystal–ambient phase — The concept of mean separation work
  • Equilibrium 2D crystal–ambient phase
  • Equilibrium shape of crystals — Atomistic approach
  • Equilibrium vapor pressure of a 2D crystal on a foreign substrate
• Equilibrium Structure of Crystal Surfaces
  • Classification of crystal surfaces
  • Equilibrium structure of a step
  • Equilibrium structure of F faces
    • Model of Jackson
    • Model of Temkin
    • Criterion of Fisher and Weeks
  • Kinetic roughness

The following sections are included:

• Thermodynamics
  • Homogeneous formation of nuclei
  • Heterogeneous formation of 3D nuclei
  • Heterogeneous formation of elastically strained 3D nuclei
  • Formation of 2D nuclei
  • Mode of nucleation on a foreign substrate
• Rate of Nucleation
  • General formulation
  • The equilibrium state
  • Steady state nucleation rate
  • Nucleation of liquids from vapors
  • Statistical contributions
  • Nucleation from solutions and melts
  • Rate of heterogeneous nucleation
  • Rate of 2D nucleation
    • Rate of 2D nucleation from vapors
    • Rate of 2D nucleation from solutions
    • Rate of 2D nucleation in melts
  • Atomistic theory of nucleation
    • The equilibrium state
    • Steady state nucleation rate
  • Nonsteady state nucleation
  • Mass crystallization and saturation nucleus density
  • Ostwald's step rule

One can say that the building units (atoms or molecules) become a part of the crystal when their chemical potential becomes equal to the chemical potential of the crystal. As discussed in Chap. 1 the latter is equal at absolute zero to the work necessary to detach a building unit from the half-crystal or kink position taken with negative sign. In other words, when the atoms or the molecules are attached to kink positions or even stronger (positions 1 and 2 in Fig. 1.15) they become a part of the crystal. In any other position they are connected more weakly to the crystal surface than atoms in the kink position and their equilibrium vapor pressure and in turn their chemical potential will differ from that of the bulk crystal. In this sense the adsorption of atoms on the crystal surface or along the steps cannot be considered as crystal growth. All this is valid when the crystal is in contact with a supersaturated ambient phase, i.e. when the chemical potential of the latter is greater than that of the crystal. In equilibrium the chemical potential of the adlayer will be equal to that of the crystal and of the parent phase.…

The following sections are included:

• Basic Concepts and Definitions
• Structure and Energy of Epitaxial Interfaces
  • Boundary region
  • Models of epitaxial interfaces
  • Misfit dislocations
  • Frank–van der Merwe model of thin overlayer
    • Interatomic potentials
    • Interfacial interactions
    • 1D model of epitaxial interface
      • Single dislocations
      • Sequence of dislocations
    • 2D model of Frank and van der Merwe.
    • Comparison of 2D and 1D models
    • Application of 1D model to thickening overlayer
  • 1D model with non-Hookean interatomic forces
  • Van der merwe model of thick overgrowth
  • Thickening overgrowth
  • The Volterra approach
• Mechanism of Growth of Epitaxial Films
  • Classification of the growth modes
  • Experimental evidence
    • Metals on insulators
    • Metals on metals
    • Metals on semiconductors
    • Semiconductors on semiconductors
      • Effect of surfactants
  • General tendencies
  • Thermodynamics of epitaxy
    • Wetting and clustering
    • Relation of Dupré for misfitting crystals
    • Thickness variation of chemical potential
    • Thermodynamic criterion of the growth mode
  • Kinetics of growth of thin epitaxial films
    • Mechanism of 2D–3D transformation
    • Kinetics of 2D–3D transformation
    • Critical temperature for 2D–3D transition
    • Cross hatch patterns
  • Surfactants in epitaxial growth
    • Thermodynamic considerations
      • Chemical potential of a bulk crystal
      • Chemical potential of a thin film
      • Thermodynamic effect of surfactants
    • Kinetics
      • Effect of surfactant on 2D nucleation
      • Attachment–detachment kinetics
      • Exchange–de-exchange kinetics

The following sections are included:

• REFERENCES
• INDEX