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In this paper, we have investigated the effect of Mn doping on the electrical properties of ZnO thin films. ZnO thin films with different amounts of Mn concentrations (0, 5, 10 and 15 mol.%) were prepared by spray pyrolysis technique. The crystal structure was examined by X-ray diffraction (XRD) analysis. XRD patterns showed that all the samples were crystallized in wurtzite structure while a decrease in crystallinity and switch in preferential orientations were observed in Mn-doped thin films comparing to undoped ZnO. The element composition of all thin films was detected by energy dispersive X-ray (EDX). The surface morphology of the films was investigated using field emission scanning electron microscope (FESEM) and optical properties were studied using UV-vis spectroscopy. UV-vis study revealed that the band gap blueshifts with the increase in Mn content and Eg increases with the increase in Mn concentration. The resistivity and activation energy were measured at room temperature and ranging from 373 K to 573 K. Comparing to undoped ZnO thin film, the resistivity of Mn-doped ZnO films increased because of different parameters such as increasing barrier height energy and reducing the oxygen deficiency.
The structural and optical characteristics of polyvinyl alcohol (PVA) doped with different concentration of Nd2O3 nanoparticles to use an active media for polymer laser were studied. The PVA polymer was considered as the host and Nd2O3 nanoparticles as the active element. The media as a thin film was prepared using spin coating technique. Structural properties of layers were investigated by X-ray diffraction (XRD) pattern and atomic force microscope (AFM) technique. The effect of the concentrations of the neodymium source on the optical properties of Nd2O3/PVA thin films was investigated through UV-Vis absorption spectroscopy and their optical band gap was evaluated. Also, the FTIR and fluorescence spectra of the samples were detected. The fluorescence spectra of films showed that the maximum wavelength occurred at 568nm with no significant shift.