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Fabrication of p-n Junction Diodes from Phthalocyanine and Electropolymerized Perylene Derivatives

Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, Ueda, Nagano 386, Japan

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MUTSUMI KIMURA

Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, Ueda, Nagano 386, Japan

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KENJI HANABUSA

Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, Ueda, Nagano 386, Japan

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HIROFUSA SHIRAI

Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, Ueda, Nagano 386, Japan

Corresponding author, Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University, Ueda, Nagano 386, Japan.

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https://doi.org/10.1002/(SICI)1099-1409(199805/06)2:3<231::AID-JPP82>3.0.CO;2-SCited by:12 (Source: Crossref)

Abstract

Perylene derivative films doped with metal ion were deposited on indium tin oxide (ITO)-coated glass electrodes by electrodeposition from solutions of N, N″-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide (hph-PTC) and CaCl₂, PbCl₂, ZnCl₂ or CoBr₂ as a supporting electrolyte in N, N-dimethylformamide (DMF). The p-n junction diodes consisting of a p-type phthalocyanine (Pc) sublimed film and an n-type hph-PTC electrodeposited film doped with metal ion exhibited Zener-type breakdown and photocurrent enhancement. The device with a p-n junction consisting of a Pc sublimed film and an hph-PTC electrodeposited film doped with Ca²⁺ showed the largest amplification of photocurrent. This result suggests that the dopant ion in hph-PTC is an important factor in the preparation of p-n junction diodes.

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