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Fabrication of p-n Junction Diodes from Phthalocyanine and Electropolymerized Perylene Derivatives
Preview AbstractPerylene derivative films doped with metal ion were deposited on indium tin oxide (ITO)-coated glass electrodes by electrodeposition from solutions of N, N″-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide (hph-PTC) and CaCl2, PbCl2, ZnCl2 or CoBr2 as a supporting electrolyte in N, N-dimethylformamide (DMF). The p-n junction diodes consisting of a p-type phthalocyanine (Pc) sublimed film and an n-type hph-PTC electrodeposited film doped with metal ion exhibited Zener-type breakdown and photocurrent enhancement. The device with a p-n junction consisting of a Pc sublimed film and an hph-PTC electrodeposited film doped with Ca2+ showed the largest amplification of photocurrent. This result suggests that the dopant ion in hph-PTC is an important factor in the preparation of p-n junction diodes.