Semiconductor Properties and Materials

The following sections are included:

• Introduction

  • Introduction and Brief History

  • Energy Band Structure in Metals, Insulators and Semiconductors

• Valence-Band Model, Hole Conduction and Intrinsic Semiconductors

  • Band Model and Hole Conduction

  • Elementary Semiconductors

  • Compound Semiconductors

• Electrical Conductivity and Temperature Effect in Intrinsic Semiconductors

  • Conductivity

  • Temperature Effect

• Extrinsic Semiconductors, p and n Type Semiconductors

  • n- Type Extrinsic Semiconductors

  • p- Type Extrinsic Semiconductors

  • Doping

• Conductivity in Extrinsic Semiconductors, Temperature Effect and Mass Action Law

  • Conductivity in Extrinsic Semiconductors

  • The Mass Action Law

  • Temperature Effect

• Lattice Defects in Semiconductors

• The p-n Junction and Rectifier

  • p-n Junction

  • Rectifier Equation

• Doping Processes

  • Diffusion Processes and Depth Control

  • Ion Implantation

  • Comparison of Diffusion and Ion Implantation

• The Metal-Semiconductor Contacts

  • Contact Nature

  • Other Properties and Contact Materials

• Some Simple Semiconductor Devices

  • The MOSFET

  • Simple Optical Devices

  • Light Emitting Diode (LED)

• Integrating Microelectronic Circuits

  • The Concept of Integrated Circuitry

  • Reliability of Semiconductor Devices

• Crystal Growth and Wafer Production

  • Single Crystal Si Manufacturing Process

  • Si Wafer Production

• Physical Vapour Deposition (PVD), Chemical Vapour Deposition (CVD) Processes and Metallisation

  • PVD and CVD Processes

  • Deposition of Metal Layers (Metallisation)

• Lithography and Etching

  • Lithography

  • Etching

• Oxidation of Silicon Semiconductors

• Packaging of Semiconductor Devices

  • Requirements of Device Packaging

  • Package Types

  • Packaging Materials

• Future Development of Semiconductors

• Summary

• Important Concepts