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APPLICATION OF PIXE- AND RBS-CHANNELING TO INVESTIGATIONS ON THE CHARACTERIZATION OF SINGLE CRYSTAL STAINLESS STEEL

T. NAKAE

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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R. TAKAHASHI

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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T. NOMURA

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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Y. NAKAI

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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H. KAGEYAMA

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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N. SHIMATANI

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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T. AWATA

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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A. NISHIHATA

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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S. ARAI

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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K. KAWATSURA

Department of Chemistry, Kyoto Institute of Technology, Matsugasaki, Sakyoku, Kyoto 606, Japan

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Y. HORINO

Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan

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Y. MOKUNO

Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan

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K. FUJII

Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan

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Y. AOKI

Department of Materials Development, Japan Atomic Energy, Research Institute, Takasaki, Gunma 370–12, Japan

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H. TAKESHITA

Department of Materials Development, Japan Atomic Energy, Research Institute, Takasaki, Gunma 370–12, Japan

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S. YAMAMOTO

Department of Materials Development, Japan Atomic Energy, Research Institute, Takasaki, Gunma 370–12, Japan

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P. GOPPELT-LANGER

Department of Materials Development, Japan Atomic Energy, Research Institute, Takasaki, Gunma 370–12, Japan

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H. NARAMOTO

Department of Materials Development, Japan Atomic Energy, Research Institute, Takasaki, Gunma 370–12, Japan

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T. MITAMURA

Faculty of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671–22, Japan

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M. TERASAWA

Faculty of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671–22, Japan

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H. UCHIDA

Faculty of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671–22, Japan

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, and

K. KOTERAZAWA

Faculty of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671–22, Japan

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https://doi.org/10.1142/S0129083594000234Cited by:0 (Source: Crossref)

Abstract

The characterization of the single crystal of type 304 stainless steels was performed by using particle induced x-ray emission and Rutherford backscattering spectroscopy with channeling technique (PIXE-C and RBS-C). They proved that the solution annealing process is absolutely necessary for production of a good single crystal of stainless steels.

They are also shown that the positions of P atoms before He irradiation were mostly substitutional sites of fcc structure and that MeV He ion irradiation induced segregation of Si and S atoms to the (110) surface.

Keywords: