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The characterization of the single crystal of type 304 stainless steels was performed by using particle induced x-ray emission and Rutherford backscattering spectroscopy with channeling technique (PIXE-C and RBS-C). They proved that the solution annealing process is absolutely necessary for production of a good single crystal of stainless steels.
They are also shown that the positions of P atoms before He irradiation were mostly substitutional sites of fcc structure and that MeV He ion irradiation induced segregation of Si and S atoms to the (110) surface.