V. Spintronics and Emerging High-Speed DevicesNo Access

HIGH-POWER SWITCHING USING III-NITRIDE METAL-OXIDE-SEMICONDUCTOR HETEROSTRUCTURES

G. SIMIN

Dept. of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

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M. ASIF KHAN

Dept. of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

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M. S. SHUR

ECSE Department and Broadband Center, Rensselaer Polytechnic Institute, Troy, NY 12180, USA

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, and

R. GASKA

Sensor Electronic Technology, Inc., Columbia, SC 29209, USA

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https://doi.org/10.1142/S0129156406003783Cited by:4 (Source: Crossref)

Abstract

III-Nitride Metal-Oxide-Semiconductor Heterojunction (MOSH) structure consists of a thin dielectric layer deposited on top of a semiconductor heterostructure with a 2D electron gas at the heterojunction interface. MOSH structures are the key components for high-power low-loss, fast RF switches. The paper discusses two types of high-power switches using III-Nitride MOSH structures. The first type uses the MOSH structure as the gate region of an AlGaN/GaN HFET. The second type uses MOSH structure as a switching capacitor. In the 2GHz - 10 GHz frequency range, switching powers from 20 to 60 W/mm have been achieved with the insertion loss below 1 dB.

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