Chapter 3. Ultra High Speed Devices and ConceptsNo Access

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

SIDDHARTH RAJAN

Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara CA 93106, USA

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UMESH K. MISHRA

Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara CA 93106, USA

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, and

TOMÁS PALACIOS

Department of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge MA, USA

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https://doi.org/10.1142/S0129156408005874Cited by:2 (Source: Crossref)

Abstract

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga-polar AlGaN/GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N-polar AlGaN/GaN HEMTs with microwave power performance comparable with state-of-art Ga-polar AlGaN/GaN HEMTs. Finally we will discuss how GaN-based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

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