Narrow Results

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga-polar AlGaN/GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N-polar AlGaN/GaN HEMTs with microwave power performance comparable with state-of-art Ga-polar AlGaN/GaN HEMTs. Finally we will discuss how GaN-based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.