SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION
Abstract
We report on terahertz detection (from 0.2 THz to 2.4 THz) by Si FinFETs of different widths (with 2, 20, and 200 fins connected in parallel). FinFETs (with a small number of fins and with feature sizes as short as 20 nm to 40 nm) showed a very high responsivity (far above that previously measured for standard CMOS). We explain this improvement by negligible narrow channel effects.
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